PART |
Description |
Maker |
SGB10UF |
60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc.
|
SGB20UF SGB35UF SGB10UF SGB15UF SGB25UF SGB30UF |
60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SGB30UFSMS SGB10UFSMS SGB15UFSMS SGB20UFSMS SGB25U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp. Micro Commercial Components Corp. MCC[Micro Commercial Components]
|
MB3505-BC01 MB351-BC01 MB352-BC01 MB354-BC01 MB356 |
35A, 600V ultra fast recovery rectifier 35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components] Micro Commercial Components Corp. Micro Commercial Components, Corp.
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
CMR1U-01M10 CMR1U-10M CMR1U-06M CMR1U-04M CMR1U-02 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
CBR1-D100 CBR1-D010 CBR1-D020 CBR1-D040 CBR1-D060 |
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE From old datasheet system Leaded Bridge Rectifier General Purpose
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
SDR1ASMS SDR1MSMS RU0003H RU0003H-15 |
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE 1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc. Solid States Devices, Inc Solid States Devices, I...
|
ESMD-169 ESMD-169TR |
1-3500 MHz, surface mount mixer, RF power 50mW E-Series Surface Mount Mixer 1 - 3500 MHz MICRO TERMINAL STRIP CENTERLINE: .050" (1,27MM) E系列表面贴装混合1 - 3500兆赫
|
MA-Com MACOM[Tyco Electronics] Littelfuse, Inc.
|